Recently, researchers from the University of Chicago and Argonne National Laboratory have studied qubits built from atomic-level vacancies in silicon carbide using theoretical methods. By combining the state-of-the-art materials simulations and neural-network-based sampling technique, the research team discovered the atomistic generation mechanism of qubits from spin defects in a wide-bandgap semiconductor. Silicon carbide is a promising semiconductor, and the qubits made from it have long coherence times and all-optical spin initialization and read-out capabilities.